Monitoring SEU parameters at reduced bias (CMOS SRAM)
نویسندگان
چکیده
منابع مشابه
SEU-Tolerant SRAM Design Based on Current Monitoring
In this paper, we present a new technique to improve the reliability of SRAMs used in space radiation environments. This technique deals with the SRAM power-bus monitoring by using Built-In Current Sensor (BICS) circuits that detect abnormal current dissipation in the memory power-bus. This abnormal current is the result of a single-event upset (SEU) in the memory and it is generated during the...
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Radiation in space is potentially hazardous to microelectronic circuits and systems such as spacecraft electronics. Transient effects on circuits and systems from high energetic particles can interrupt electronics operation or crash the systems. This phenomenon is particularly serious in complementary metal-oxide-semiconductor (CMOS) integrated circuits (ICs) since most of modern ICs are implem...
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A series of experiments were carried out at the Radiation Effects Facility (RADEF) [1] in the Accelerator laboratory of the University of Jyväskylä. Experiments consisted in irradiating the memory arrays in vacuum with a variety of heavy ions. The effect of Linear Energy Transfer (LET) of incoming ion and component operating mode (static/active) [2] on the component failure mode (SEU/MBU/SEFI) ...
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ژورنال
عنوان ژورنال: IEEE Transactions on Nuclear Science
سال: 1993
ISSN: 0018-9499,1558-1578
DOI: 10.1109/23.273487